- Issue
- Journal of Siberian Federal University. Mathematics & Physics. 2009 2 (3)
- Authors
- Chernichenko, Angelina V.; Marushchenko, Dmitry A.; Turpanov, Igor A.; Grebenkova, Yulia E.; Melnikov, Pavel N.
- Contact information
- Chernichenko, Angelina V.; Marushchenko, Dmitry A.; Turpanov, Igor A. ; Grebenkova, Yulia E.; Melnikov, Pavel N.
- Keywords
- Ni-Ge films; the Faraday effect; the interface of a magnetic metal and a semiconductor
- Abstract
The Faraday magnetooptical effect (FE) of bi-layer and multilayer Ni-Ge films and its changes at stepped annealing, as well as the films surface morphology were experimentally investigated. Inverse linear dependence of FE on the intermediate Ge layer thickness in multilayer films, and strong decrease of the saturation field in these films were revealed. The FE increase at the first annealing and gradual decrease at the next annealing were explained by mutual diffusion of the film components.
- Pages
- 376-383
- Paper at repository of SibFU
- https://elib.sfu-kras.ru/handle/2311/1207
Journal of Siberian Federal University. Mathematics & Physics / The Magnetooptical Faraday Effect in Ni-Ge Films: the Dependence on the Ge Layers Thickness and the Annealing Regime
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