Journal of Siberian Federal University. Chemistry / Effect of Ultrasonic Treatment on Sulphuric Acid Leaching of Indium and Tin from Spent Displays

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Issue
Journal of Siberian Federal University. Chemistry. 2024 17 (2)
Authors
Kolmachikhina, Elvira B.; Kolmachikhina, Olga B.; Golbizoda, Zamira M.; Yankina, Yana A.
Contact information
Kolmachikhina, Elvira B. : Laboratory of Advanced Technologies for Complex Processing of Mineral and Technogenic Raw Materials of Nonferrous and Ferrous Metals, Ural Federal University, named after the first President of Russia, B. N. Yeltsin Yekaterinburg, Russian Federation; ; Kolmachikhina, Olga B. : Laboratory of Advanced Technologies for Complex Processing of Mineral and Technogenic Raw Materials of Nonferrous and Ferrous Metals, Ural Federal University, named after the first President of Russia, B. N. Yeltsin Yekaterinburg, Russian Federation; Golbizoda, Zamira M.: Laboratory of Advanced Technologies for Complex Processing of Mineral and Technogenic Raw Materials of Nonferrous and Ferrous Metals, Ural Federal University, named after the first President of Russia, B. N. Yeltsin Yekaterinburg, Russian Federation
Keywords
ultrasound; leaching; sulfuric acid; display; apparent activation energy; reaction order
Abstract

The influence of ultrasonic treatment, duration, concentration of sulfuric acid and temperature on the indices of leaching of indium and tin from the surface of glass substrates of used liquid crystal displays has been studied. The positive effect of ultrasonic treatment, allowing to reduce the leaching duration up to 20 min, the concentration of sulfuric acid (0.2 M)and the temperature (333 K) is established. The partial orders of reactions of dissolution of indium and tin oxides by sulfuric acid and the values of apparent activation energy, including the use of ultrasonic treatment, were calculated. Acoustic influence on the pulp during leaching allowed to eliminate diffusion difficulties in the dissolution of tin oxide and kinetic – in the decomposition of indium oxide, contributing to the transition of the process to a mixed regime

Pages
257–267
EDN
XTXGAQ
Paper at repository of SibFU
https://elib.sfu-kras.ru/handle/2311/153017