Siberian Federal University 
- Issue
- Journal of Siberian Federal University. Chemistry. 2010 3 (3)
- Authors
- Ananyeva, Julia E.; Eliseeva, Natalia S.; Krasnov, Pavel O.; Kuzubov, Alexander A.; Fedorov, Alexander S.
- Contact information
- Ananyeva, Julia E. : Siberian Federal University , 79 Svobodny, Krasnoyarsk, 660041 Russia , e-mail: ; Eliseeva, Natalia S. : Siberian Federal University , 79 Svobodny, Krasnoyarsk, 660041 Russia; Krasnov, Pavel O. : Siberian State Technological University , 82 Mira, Krasnoyarsk, 660049 Russia; Kuzubov, Alexander A. : Siberian Federal University Siberian State Technological University , 79 Svobodny, Krasnoyarsk, 660041 Russia 82 Mira, Krasnoyarsk, 660049 Russia; Fedorov, Alexander S. : Institute of Physics, SB RAS , Akademgorodok, Krasnoyarsk, 660036 Russia
- Keywords
- quantum chemistry; graphene; defects; deformation
- Abstract
Theoretical investigation of influence of external pressure on defects migration in the graphene layers has been performed. It has been shown that compression of structure along parallel direction and extension along perpendicular direction to the vacancy migration decrease activation energy of vacancy migration. It leads to increasing of jump frequency. On the basis of derived results it is possible to create method allowing us to localize defects in the graphene structure without annealing up to the high temperatures.
- Pages
- 305-310
- Paper at repository of SibFU
- https://elib.sfu-kras.ru/handle/2311/2186
Journal of Siberian Federal University. Chemistry / Theoretical Investigation of Dependence of Single Vacancy Migration in Graphene on Its Deformation
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