Journal of Siberian Federal University. Engineering & Technologies / Influence of Crystal Structure on the Electrical Conductivity of Semiconducting Germanium

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Issue
Journal of Siberian Federal University. Engineering & Technologies. 2011 4 (5)
Authors
Shimanskiy, Alexander F.; Podkopaev, Oleg I.; Vahrin, Victor V.
Contact information
Shimanskiy, Alexander F. : Siberian Federal University , 79 Svobodny, Krasnoyarsk, 660041 Russia , e-mail: ; Podkopaev, Oleg I. : OJSC Germanium , 1 Transportny, Krasnoyarsk, 660027 Russia; Vahrin, Victor V. : OJSC Germanium , 1 Transportny, Krasnoyarsk, 660027 Russia
Keywords
semiconductors; germanium; the electrical conductivity; electronic surface states
Abstract

The correlation of the electrical conductivity and structure of polycrystalline semiconductor optical germanium (SOGe) and high-pure germanium (HPGe) is established. The conductivity of SOGe is reduced with decrease of grain size, that is connected to decrease of carrier mobility, as result of dispersion on crystallites boundaries. The conductivity of HPGe is increased with reduced grain size, following increased electronic surface states concentration.

Pages
542-546
Paper at repository of SibFU
https://elib.sfu-kras.ru/handle/2311/2680

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