- Issue
- Journal of Siberian Federal University. Engineering & Technologies. 2011 4 (5)
- Authors
- Shimanskiy, Alexander F.; Podkopaev, Oleg I.; Vahrin, Victor V.
- Contact information
- Shimanskiy, Alexander F. : Siberian Federal University , 79 Svobodny, Krasnoyarsk, 660041 Russia , e-mail: ; Podkopaev, Oleg I. : OJSC Germanium , 1 Transportny, Krasnoyarsk, 660027 Russia; Vahrin, Victor V. : OJSC Germanium , 1 Transportny, Krasnoyarsk, 660027 Russia
- Keywords
- semiconductors; germanium; the electrical conductivity; electronic surface states
- Abstract
The correlation of the electrical conductivity and structure of polycrystalline semiconductor optical germanium (SOGe) and high-pure germanium (HPGe) is established. The conductivity of SOGe is reduced with decrease of grain size, that is connected to decrease of carrier mobility, as result of dispersion on crystallites boundaries. The conductivity of HPGe is increased with reduced grain size, following increased electronic surface states concentration.
- Pages
- 542-546
- Paper at repository of SibFU
- https://elib.sfu-kras.ru/handle/2311/2680
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0).